Finding internal vector from the barycenter of vector in tetrahedron for 3-D semiconductor device simulation

碩士 === 國立中央大學 === 電機工程學系 === 105 === In this thesis, in order to reduce the process cost, we use C language software to simulate characteristics of semiconductor device. We developed 3D barycenter module which is composed of tetrahedral mesh elements to simulate 3D semiconductor device. The 3D modul...

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Bibliographic Details
Main Authors: Kai-Che Chien, 簡楷哲
Other Authors: Yao-Tsung Tsai
Format: Others
Language:zh-TW
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/v2yr4d
Description
Summary:碩士 === 國立中央大學 === 電機工程學系 === 105 === In this thesis, in order to reduce the process cost, we use C language software to simulate characteristics of semiconductor device. We developed 3D barycenter module which is composed of tetrahedral mesh elements to simulate 3D semiconductor device. The 3D module is better than 2D module and it increases the flexibility to fit the environment. First of all, a simple tetrahedral resistor and PN junction will be simulated and compare to the theoretical for verification. Next, the tetrahedral module will be applied to trapezoidal module, and extended to cylindrical semiconductor device. The 3D module can help us improve the accuracy of semiconductor device.