Investigation on the Interfacial Traps of Plasma-Treated HfO2/Al2O3/GaSb MOS Capacitors
碩士 === 國立中央大學 === 電機工程學系 === 105 === The development of current complementary metal-oxide-semiconductor (CMOS) integrated circuits, which follows Moore’s Law for decades, has approaching its fundamental limit. Pursuing a high mobility channel material to replace current Si-based material is inevitab...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31312817590982261484 |