Simulation for Cu-platted Front Side Metallization of Si-based Solar Cell
碩士 === 國立中央大學 === 物理學系 === 105 === In recent decades, the solar energy techniques grow very quickly. Because solar energy cannot exhaust greenhouse gas that is the main cause of greenhouse effect. Currently, the solar cell cannot be commonly employed since its price is still expensive. Our goal in t...
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ndltd-TW-105NCU051980392019-10-24T05:19:29Z http://ndltd.ncl.edu.tw/handle/v7evnw Simulation for Cu-platted Front Side Metallization of Si-based Solar Cell Jheng-Yan Cai 蔡政諺 碩士 國立中央大學 物理學系 105 In recent decades, the solar energy techniques grow very quickly. Because solar energy cannot exhaust greenhouse gas that is the main cause of greenhouse effect. Currently, the solar cell cannot be commonly employed since its price is still expensive. Our goal in this study is to greatly reduce the cost but only losing little efficiency. One solution is to replace a portion of silver front side metallization by copper. In our simulation, we change number, height and composition of fingers to simulate solar cell efficiency. First, we obtained the parameters which are independent of fingers, and then used PC1D to calculate cell’s IV-data. Secondly, the single diode model is employed to obtain the short circuit current, the series resistance which are independent fingers, dark current, the ideal factor and the shunt resistances. Finally, once the finger’s electrical and structural parameters are included, the cell’s efficiency can be calculated. For cupper-plated front side metallization, the simulation process is similar but considering electric and structural parameters of copper. We discussed the relations between silver height, copper height and efficiency; and the relation between widening ratio and efficiency. By comparing single layer finger with Cu-plated finger, we successfully reduce about 24.47% of Ag with additional 21.38% of Cu , while, only 0.012% of efficiency is losing. This reveals a promising reduction of cost in Si-based solar cell with Cu-platted front side metallization. Finally, we propose a promising calculation tools, combining the PC1D and circuit model, to simulate the best combination of Si-based solar cell with Cu-platted front side metallization, as long as the real electrical and structural parameters implemented from experimental results. Yu-Hui Tang 唐毓慧 2017 學位論文 ; thesis 44 en_US |
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碩士 === 國立中央大學 === 物理學系 === 105 === In recent decades, the solar energy techniques grow very quickly. Because solar energy cannot exhaust greenhouse gas that is the main cause of greenhouse effect. Currently, the solar cell cannot be commonly employed since its price is still expensive. Our goal in this study is to greatly reduce the cost but only losing little efficiency. One solution is to replace a portion of silver front side metallization by copper.
In our simulation, we change number, height and composition of fingers to simulate solar cell efficiency. First, we obtained the parameters which are independent of fingers, and then used PC1D to calculate cell’s IV-data. Secondly, the single diode model is employed to obtain the short circuit current, the series resistance which are independent fingers, dark current, the ideal factor and the shunt resistances. Finally, once the finger’s electrical and structural parameters are included, the cell’s efficiency can be calculated.
For cupper-plated front side metallization, the simulation process is similar but considering electric and structural parameters of copper. We discussed the relations between silver height, copper height and efficiency; and the relation between widening ratio and efficiency. By comparing single layer finger with Cu-plated finger, we successfully reduce about 24.47% of Ag with additional 21.38% of Cu , while, only 0.012% of efficiency is losing. This reveals a promising reduction of cost in Si-based solar cell with Cu-platted front side metallization.
Finally, we propose a promising calculation tools, combining the PC1D and circuit model, to simulate the best combination of Si-based solar cell with Cu-platted front side metallization, as long as the real electrical and structural parameters implemented from experimental results.
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author2 |
Yu-Hui Tang |
author_facet |
Yu-Hui Tang Jheng-Yan Cai 蔡政諺 |
author |
Jheng-Yan Cai 蔡政諺 |
spellingShingle |
Jheng-Yan Cai 蔡政諺 Simulation for Cu-platted Front Side Metallization of Si-based Solar Cell |
author_sort |
Jheng-Yan Cai |
title |
Simulation for Cu-platted Front Side Metallization of Si-based Solar Cell |
title_short |
Simulation for Cu-platted Front Side Metallization of Si-based Solar Cell |
title_full |
Simulation for Cu-platted Front Side Metallization of Si-based Solar Cell |
title_fullStr |
Simulation for Cu-platted Front Side Metallization of Si-based Solar Cell |
title_full_unstemmed |
Simulation for Cu-platted Front Side Metallization of Si-based Solar Cell |
title_sort |
simulation for cu-platted front side metallization of si-based solar cell |
publishDate |
2017 |
url |
http://ndltd.ncl.edu.tw/handle/v7evnw |
work_keys_str_mv |
AT jhengyancai simulationforcuplattedfrontsidemetallizationofsibasedsolarcell AT càizhèngyàn simulationforcuplattedfrontsidemetallizationofsibasedsolarcell |
_version_ |
1719276777620111360 |