Effects of phosphorus doping on the electronic charge distribution in Iron-base superconducting material LaOFeAs1-xPx

• Main Authors: Shih-Chieh Tai, 戴士傑
• Other Authors: 李文献
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/fx4h85

碩士 === 國立中央大學 === 物理學系 === 105 === We study a kind of iron-base superconductor material LaOFeAs1-xPx ( x =0.4,0.48). This material is composed of different fraction phosphorus and LaOFeAs which is not superconducting material. Depend on the master’s thesis written by Shu-Shi, Chen. Sample was made by solid reaction and magnetic behavior, order parameter, magnetic structure, superconductivity and so on are studied. Crystal structure is tetragonal, space group is P4/nmm determined by X-ray diffraction and it is layer structure which composed of La2O2 and Fe2As2. Under the room temperature, we found that when increasing the doping amount of phosphorus, electrons would come closer to the iron-ion by the electron density map. In order to check the difference through the TC, we used the liquid helium to make the samples cooling down to low temperature (3K). Then we discovered the electrons distribution between La-O layers and As/P-Fe layers, the fraction x = 0.4, was more dispersed than the other. Finally, according to the M(H) curve graph we found the special case at 210K, it might have the ferromagnetic component. And it’s electrons distribution is special and different from others.