| Summary: | 碩士 === 國立中央大學 === 物理學系 === 105 === In this thesis, we study electrical transport properties and low frequency noise behaviors on chemical-vapor-deposition (CVD) monolayer WS2 and MoS2 FETs devices. We measure the transfer function and the IV characteristics, and N-type semiconducting behaviors of both WS2 and MoS2
are also obtained. The mobility of single-layered WS2 and MoS2 are 1-2 cm2/Vs and 30-40 cm2/Vs, respectively. Moreover, the low-frequency noise behavior of monolayer WS2 FETs is investigated, and low frequency noise performance in high carrier density (above 3 × 1013 cm-2) of monolayer MoS2 FETs is discussed in Chapter 3.
Carrier density dependence of low frequency electrical noise is a way to determine whether the 1/f noise is dominated by fluctuations in carrier number or carrier mobility. Carrier density dependence is an important topic to characterize the source of electrical current fluctuation forming 1/f noise out. Our experimental results show that 1/f noise of CVD single-layer WS2 FETs is dominated by fluctuation of carrier mobility, although γ=1.5 of this WS2 1/f noise deviates from Hooge empirical law, and 1/f noise of CVD single-layer MoS2 FETs at high carrier density regime is dominated by fluctuation of carrier number.
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