Characterization of GaN and Power MOSFETs in Boost Converter

• Main Authors: Liu, Chen-Yu, 劉珍妤
• Other Authors: Chieng, Wei-Hua
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/a9kf6y

碩士 === 國立交通大學 === 機械工程系所 === 105 === Nowadays, in the generation of electricity used widely, the applications of power-electricity, not only the AC power supply, but also the DC one which is produced by the solar system, are inseparable with our daily life. The thesis studies the DC/DC converter that has 96V of the input voltage, and 400W of the output power, which is in application to the Si-MOS and the GaN. The GaN is the material that has great characteristic, for instance, high mobility, high current density, low on-resistance and higher breakdown voltage, so that it can decrease the loss of the switch effectively. The research compares the two different FET used on DC/DC converter, and analyzes the advantage and disadvantage of two different materials by the efficiency of the modules.