| Summary: | 碩士 === 國立交通大學 === 機械工程系所 === 105 === Nowadays, in the generation of electricity used widely, the applications of power-electricity, not only the AC power supply, but also the DC one which is produced by the solar system, are inseparable with our daily life. The thesis studies the DC/DC converter that has 96V of the input voltage, and 400W of the output power, which is in application to the Si-MOS and the GaN. The GaN is the material that has great characteristic, for instance, high mobility, high current density, low on-resistance and higher breakdown voltage, so that it can decrease the loss of the switch effectively. The research compares the two different FET used on DC/DC converter, and analyzes the advantage and disadvantage of two different materials by the efficiency of the modules.
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