Theoretical studies of effective hole g-factor of GaAs/AlGaAs quantum dots under external stress
碩士 === 國立交通大學 === 電子物理系所 === 105 === In quantum computing, hole spin is regarded as a good choice of qubit and spin control plays an important role. Full spin control(FSC) could be realized that one of the components of hole g-tensor be reversed. In this thesis, I focus on how the quantum dot(QD) ge...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/n2p436 |
| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 105 === In quantum computing, hole spin is regarded as a good choice of qubit and spin control plays an important role. Full spin control(FSC) could be realized that one of the components of hole g-tensor be reversed. In this thesis, I focus on how the quantum dot(QD) geometry and external stress affect the hole g-tensor.
The hole g-tensor is theoretically calculated using Luttinger-Kohn 4-band model, by considering uniaxial stress and magnetic field. The effect of magnetic field includes vector potential and spin zeeman term. We use the gauge invariant finite difference method as the numerical calculation.
It is found that the magnitude of gz is one order larger than in-plane g-factor. The geometry of QD causes the change of valence band mixing(VBM) and then affects in-plane g, while gz is affected little. Uniaxial stress also causes VBM and will improve or reduce the effect of geometry. The effect of vector potential causes different effect to hole g from zeeman term, and we have to study more about the vector potential effect in the future.
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