Investigation and Analysis of Ultra-Thin-Body Hetero-Channel III-V/Ge MOSFETs and Mono-/Few-Layer 2-D Transition-Metal-Dichalcogenide Based Logic Circuits and SRAM Cells
博士 === 國立交通大學 === 電子研究所 === 105 === This dissertation provides an extensive assessment of the scalability of the exploratory ultra-thin-body (UTB) III-V/Ge hetero-channel MOSFETs and the performance/stability of 2-D transition-metal-dichalcogenide (TMD) based logic circuits and SRAM cells. Device-ci...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87955385284377994089 |