Improving Contact Resistance of Molybdenum Disulfide Transistor
碩士 === 國立交通大學 === 電子研究所 === 105 === The atomic thickness of 2D materials effectively mitigates the short channel effect, and opens up new possibilities to scale device and extend the Moore’s law. Among 2D materials, transition metal dichalcogenides-MoS2 has attracted many attentions as the channel m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58554630904620697412 |