Theoretical Investigation of Optimized Nanowire Diameter and Short Channel Effects for Gate-All-Around III-V Tunnel FETs
碩士 === 國立交通大學 === 電子研究所 === 105 === This thesis investigates the diameter dependence for III-V gate-all-around homojunction and heterojunction TFET using TCAD numerical simulation. The optimized diameter has been shown due to the counterbalance of the gate control and the quantum confinement effect....
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44732999900811713543 |