Graphene Nanostructures for Organic P3HT Thin Film Transistors

碩士 === 國立交通大學 === 照明與能源光電研究所 === 105 === Technology has always come from human nature. In recent years, information terminal devices have become more convenient and easily portable to meet customers’ needs. This desire and request gradually stimulates the development of flexible electronics. Convent...

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Bibliographic Details
Main Authors: Lin, Zong-Rong, 林宗嶸
Other Authors: Hsieh, Chien-Wen
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/86872776600847513736
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Summary:碩士 === 國立交通大學 === 照明與能源光電研究所 === 105 === Technology has always come from human nature. In recent years, information terminal devices have become more convenient and easily portable to meet customers’ needs. This desire and request gradually stimulates the development of flexible electronics. Conventional electronic components use silicon wafers or glass as the substrate material and are fabricated using expensive lithography processes, while flexible electronics use either Spin-Coating or Ink- -jet Printing) and other process technology. Microelectronic components are manufactured on flexible substrates, which significantly reduce the cost of traditional semiconductor processes and make organic materials attract attention in recent years. Many manufacturers have also invested in research and development. Electronic products made of inorganic materials in the past are replaced by organic materials were many advantages, also developed many products. For example, electronic paper, flexible display, OTFT, and RFID tags.   In the fabrication process of organic devices, solution based process were adopted in this study, which have advantages such as low cost and low process temperature. However, the electrical properties of organic thin film transistors(OTFT) are usually poor compare with thin-film transistor made of inorganic materials. The performance improvement on OTFT is therefore an important research issue and will be investigated in this thesis.   This study utilized graphene nanostructures a mobility enhancer for organic thin film transistors. The loading of graphene plays a crucial role in transistor performance. In our research, when we hybrid 1wt% graphene nanostructures in P3HT. A ten-fold enhancement in device mobility(0.00626→0.0619 cm2/Vs) has been successfully achieved.   The second is to employ graphene as barrier films layer covering the surface of OTFTs. The purpose is to isolate the gas molecules and water molecules in the environment in order to extend the operational life of the components. In the atmospheric environment, through the measurement of electrical components can be found organic thin-film transistor devices without a graphene film barrier have lost their transistor characteristics over a 10 days, and the use of graphene film as a barrier layer of the organic thin film transistor components in the life of 57 days to gradually lose the transistor characteristics. It can be found that adding a barrier layer of graphene film can effectively block the destruction of organic semiconductors by water and oxygen, increasing the component life of up to 47 days.