| Summary: | 碩士 === 國立交通大學 === 照明與能源光電研究所 === 105 === In order to improve the properties of III-V metal oxide semiconductor
transistor performance, one challenge is to overcome the problem of high-k
interface defects. we make MOSCAPs with the combination of wet chemical
surface cleaning with TMA pretreatment , reducing oxides of the substrate surface, and hydrogen plasma for improving the quality of the interface between the substrate and Al2O3 is effect will, interface state density (Dit) is lowered to 3E12cm-2V-1. And attempts by the reaction of Ti and Al2O3 formed to increase the dielectric and slow leakage current. An auxiliary TEM image, showing the value of the dielectric equivalent oxide thickness of the gate oxide layer of the rent significantly improved. Finally, we fabricated a n-InGaAs field effect transistor with atomic layer deposition alumina dielectric layer. The transistor on-off current is about~1 E3.
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