Characterization of Metal Oxide Semiconductor Devices with High-k Dielectrics
碩士 === 國立交通大學 === 照明與能源光電研究所 === 105 === In order to improve the properties of III-V metal oxide semiconductor transistor performance, one challenge is to overcome the problem of high-k interface defects. we make MOSCAPs with the combination of wet chemical surface cleaning with TMA pretreatment , r...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5t3dd9 |