Study on the Passivation of High-k/In0.53Ga0.47As FinFETs Using In Situ Remote-Plasma Gas Treatment
碩士 === 國立交通大學 === 照明與能源光電研究所 === 105 === In this study, we fabricate In0.53Ga0.47As FinFETs, GAA-FETs and demonstrate on effects of in situ post remote-plasma (PRP) gas treatment on the device performances. Performing dry and wet etching methods, 3D MOSFET devices, owning LCH down to 80 nm and WFin...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29419175531314604566 |