| Summary: | 碩士 === 國立交通大學 === 照明與能源光電研究所 === 105 === In this study, we fabricate In0.53Ga0.47As FinFETs, GAA-FETs and demonstrate on effects of in situ post remote-plasma (PRP) gas treatment on the device performances. Performing dry and wet etching methods, 3D MOSFET devices, owning LCH down to 80 nm and WFin down to 50 nm, have been fabricated and characterized. In situ post remote-plasma gas treatment provides much better electrostatic control and shows improved S.S., DIBL and VT roll-off. Optimizing oxide and interfacial qualities by PRP treatment, a high ION/IOFF of ~ 105 along with better electrical characteristics have been obtained for In0.53Ga0.47As FinFET and GAA-FET devices. Scaling metrics for InGaAs FinFETs are also systematically studied with LCH from 200 nm down to 80 nm and WFin from 90 nm down to 50 nm which shows an excellent immunity to short channel effects. In addition, to evaluate the impacts of in situ post remote-plasma gas treatment on the reliability properties of III-V based 3D MOSFETs, the positive bias temperature instability (PBTI) has also been carried out. The In0.53Ga0.47As FinFET treated by PRP treatment illustrates better reliability performance and less degradation for a long-term stress at large bias voltage and high operate temperature. This can be attributed to stronger bonding energy and lower density of trap states in the high-k gate dielectric. The PBTI results also show that, for an operation lifetime of 10 years at 85 °C, the In0.53Ga0.47As FinFETs achieved in this study with PRP treatment would be ensured to operate at an overdrive voltage of ~ 0.32 V.
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