UV-assisted thermal annealing of PECVD Low-k Silicon Carbonitride Films
碩士 === 國立交通大學 === 材料科學與工程學系所 === 105 === Low-k silicon carbonitride films (SiCxNy) (k = 5.0–6.0) have been introduced as low-k etch-stop/dielectric barrier materials in CMOS backend interconnections. For 14 nm node and below, SiCxNy films (k < 5.0) with good mechanical strength are highly desirab...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/k23hdz |