Metal Oxide Semiconductor for Gas Sensor and Liquid Crystal Lens applications

• Main Authors: Hu, Li-Lun, 胡立倫
• Other Authors: Zan, Hsiao-Wen
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/64725215624970520620

碩士 === 國立交通大學 === 光電工程研究所 === 105 === The aim of this thesis is using metal oxide semiconductor for NO gas sensor and liquid crystal lens applications. For NO gas sensor, we use hydrothermal process to grow ZnO nanorods on ITO glass substrates. For electrical measurement, silver nanowires electrodes were dropped onto the ZnO nanorods, and Al were deposited as auxiliary electrodes. We changed different process conditions to improve the gas sensing performance of our devices. The maximum response for 100ppb NO gas is 29.9% at room temperature. The lowest concentration for detection is 10ppb NO gas, which has response of 6.8%. For liquid crystal lens, we successfully demonstrated that the IZO thin film can use as a high resistance layer in the large aperture (diameter: 20mm) liquid crystal lens. Moreover, the sheet resistance of the high resistance layer can be modified by changing the pretreatment of the thin film.