Study of GaN-based vertical-cavity surface-emitting lasers by using wafer bonding and laser lift-off techniques

• Main Authors: Lian, Jhen-Ting, 連振廷
• Other Authors: Lu, Tien-Chang
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/08183391257533838600

碩士 === 國立交通大學 === 光電工程研究所 === 105 === Solid state electronics have attracted considerable attentions over the past decades, owing to their wide variety of applications. In particular, GaN-based devices, which can be applied in back lighting, ambient lighting, display, optical storage, optical communication, and so on, have been widely investigated by both academia and industry. Recently, several remarkable breakthroughs in device performance were reported. Laser lift-off and wafer bonding techniques were adopted in order to fabricate different types of vertical-cavity surface-emitting lasers. The laser characteristics such as L-I-V curve, near field images were measured by electroluminescence system under pulse condition. Lasing action were achieved in optimized devices with 10 micrometers and 12 micrometers aperture, and the threshold current density were 57.30 kA/cm2 and 57.47 kA/cm2 respectively. Non-uniform light emitting inside the aperture can be attributed to surface defects. We believe that, by using low defect density epi-wafer in fabrication, the defect-free rate and emission uniformity can be improved in the future. In addition, lower threshold current can be achieved by reducing the thickness of ITO layer and further polishing on n-GaN side to obtain smooth surface.