Design and Optimization of III-V Vertical-Cavity Surface-Emitting Laser
博士 === 國立交通大學 === 光電工程研究所 === 105 === Recently, GaAs- and GaN-based materials had shown its superior potential for Opto-Electronic device applications, which is due to its emission wavelength can cover from near ultra violet to near infrared wavelength by tuning the alloy composition. And the high e...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91922847150345932247 |