| Summary: | 碩士 === 國立暨南國際大學 === 電機工程學系 === 105 === The main theme of this thesis is to study the resistive switching characteristics of metal-insulator-metal (MIM) structure with different gate electrode and insulator materials. In this work, we also developed a model to describe the multi-level resistive switching in the MIM devices with insulator layers mixed with -aminopropyltriethoxysilane (-APTES). An aluminum (Al) or titanium (Ti) was deposited onto a fluorinated tin oxide (FTO) as the bottom electrode. Various insulator layers including PS、P2VK、PVDF and -APTES were coated onto the substrate separately, by spin coating, then a Al or Ti top electrode were evaporated onto the insulator layer through metal mask by thermal evaporation. The completed devices were then subjected to I-V characteristics measurement by semiconductor parameter analyzer Agilent 4156C.
It is found that resistance was switched between high-resistance and low-resistance states in the devices with PVDF as insulator. The devices can have better resistive switching characteristics than those with PS or P2VK does. It is interesting to note that multi-level resistive switching behavior appears as the insulator material PVDF is mixed with -APTES, particularly with a certain -APTES concentration. By referring to the literature, it is known that the -APTES has loose molecular structure and may have oxygen vacancies in the film. In this thesis, we have therefore proposed a model based on the conducting filament theory to explain the muti-level resistive switching of PVDF + -APTES layer. It is believed that the loose molecular structure of -APTES produces a lot of conducting filaments in the insulator. The rupture of these conducting filaments individually caused by Joule heating after applied bias makes the resistance of the layer increase step by step. Our proposed model explains the multi-level resistive switching successfully.
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