Quantum Transport Modeling for Nanoscale FET with Non-Equilibrium Green’s Function Formalism

碩士 === 國立成功大學 === 奈米積體電路工程碩士學位學程 === 105 === As complementary metal–oxide–semiconductor (CMOS) technology progresses, device dimensions have been scaled into the nanometer regime. The electronic devices would show more pronounced wave characteristics of carriers when operating. The non-equilibrium G...

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Bibliographic Details
Main Authors: Yu-FengHsieh, 謝宇峰
Other Authors: Kuo-Hsing Kao
Format: Others
Language:en_US
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/es8b59

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