Quantum Transport Modeling for Nanoscale FET with Non-Equilibrium Green’s Function Formalism

• Main Authors: Yu-FengHsieh, 謝宇峰
• Other Authors: Kuo-Hsing Kao
• Format: Others
• Language: en_US
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/es8b59

碩士 === 國立成功大學 === 奈米積體電路工程碩士學位學程 === 105 === As complementary metal–oxide–semiconductor (CMOS) technology progresses, device dimensions have been scaled into the nanometer regime. The electronic devices would show more pronounced wave characteristics of carriers when operating. The non-equilibrium Green’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysis method to treat nanoscale electronic devices with quantum mechanical. At the start of this thesis, we calculated the band structure based on the tight-binding theory. The calculations of band structure used to extract band gap, longitudinal and transverse effective electron masses. Then, we explore the impact of the parameter of confinement modulated on double-gate (DG) MOSFET, by explicitly incorporating the quantum confinement effects in the band structure calculations using the tight-binding theory. Using the nanoMOS 4.0 simulator, we calculate the drain current in DG MOSFET using the quantum ballistic transport model. At last, we choice the tunneling barrier junction (TBJ) MOSFET structure in order to suppress the short channel effects (SCE). To further enhance the TBJ MOSFET performance, we try to use single barrier structure. The single barrier at source structure which still have ability of SCE suppression, and have higher drive current than TBJ MOSFET.