Study on Lead Sulfide buffer layer induced the preferential growth of CH3NH3PbI3 films and its resistive memory properties
碩士 === 國立成功大學 === 電機工程學系 === 105 === In this study, PbS buffer layer with (100) preferred orientation was deposited via chemical bath deposition (CBD) process. It is expected to control the orientation of the CH3NH3PbI3 thin film by incorporating the PbS buffer layer. The PbS buffer layer induced th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/yt6msv |