A Novel GaAs pHEMT Radio Frequency DPDT Switch Design and Application
碩士 === 國立成功大學 === 微電子工程研究所 === 105 === The implementation of SPDT and DPDT switch in MMIC application is presented in this thesis. The SPDT switch uses shunt-shunt transistor topology to get lower insertion loss and better isolation. The operation frequency of this work is 14 GHz – 24 GHz, the inser...
Main Authors: | Chia-YiLee, 李珈誼 |
---|---|
Other Authors: | Yeong-Her Wang |
Format: | Others |
Language: | en_US |
Published: |
2018
|
Online Access: | http://ndltd.ncl.edu.tw/handle/ep9jax |
Similar Items
-
The Characteristic Analysis of RF Switches for GaAs pHEMT
by: Wei-Nung Li, et al.
Published: (2011) -
Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms
by: Chia-Chu Cheng, et al.
Published: (2018-09-01) -
Optimized ESD Protection Schottky Diode for GaAs pHEMT RF SPST Switch Application
by: Shih-Pin Lo, et al.
Published: (2007) -
pHEMT Antenna Switch
by: 洪國瀛
Published: (2007) -
AlGaAs/InGaAs/GaAs pHEMT Model Parameter Extraction and Establishment
by: Guan-Kai Huang, et al.
Published: (2006)