The SnOx gate oxide-based III-Nitride High Electron Mobility Transistors

The SnOx gate oxide-based III-Nitride High Electron Mobility Transistors

碩士 === 國立成功大學 === 微電子工程研究所 === 105

Bibliographic Details
Main Authors:	Cheng-YuHsieh, 謝呈榆
Other Authors:	Ricky Wenkuei Chuang
Format:	Others
Language:	zh-TW
Published:	2017
Online Access:	http://ndltd.ncl.edu.tw/handle/rd23jh

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