The SnOx gate oxide-based III-Nitride High Electron Mobility Transistors

• Main Authors: Cheng-YuHsieh, 謝呈榆
• Other Authors: Ricky Wenkuei Chuang
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/rd23jh

碩士 === 國立成功大學 === 微電子工程研究所 === 105