Study of Stress Effect on Ferroelectric Domain Dynamics inFlexible PZT Films

• Main Authors: Tseng JingChen, 曾靖程
• Other Authors: Yi-Chun Chen
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/yu79pa

碩士 === 國立成功大學 === 物理學系 === 105 === Pb(Zr0.52Ti0.48)O3 (PZT), which was at the morphotropic phase boundary between tetragonal and rhombohedral perovskites, had a high piezoelectric coefficient and dielectric constant. PZT films grown on SrTiO3 (STO) and mica substrates had the same value in their piezoelectric coefficient (d33), so the substrate stress had no influence in d33 value. However, activation field of PZT films changed by different substrate through observing domain growth behavior. Moreover, we also demonstrated the domain switching by pressing the sample by an AFM tip with different electron affinities. We observed static charges appeared on the PZT surface due to the friction between the tip and the film. These charges induced from the friction could switch ferroelectric domain to up or down without the electric field.