Non-local Measurement in MoS2 Transistors

• Main Authors: Hui-YingSiao, 蕭惠盈
• Other Authors: Tse-Ming Chen
• Format: Others
• Language: en_US
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/ht7x8q

碩士 === 國立成功大學 === 物理學系 === 105 === The control and manipulation of the electron spin in semiconductors is central to spin- tronics, which aims to represent digital information using spin orientation rather than electron charge. Due to the unique physical characteristics, transition metal dichalco- genides (TMDCs) have provided new platforms to probe the spin interaction with other degrees of freedom for electrons, as well as to be used for novel spintronics applications. Molybdenum disulphide(MoS2) has a strong spin-orbit coupling (SOC) originated from the d orbitals of the heavy metal atoms, and can be an interesting platform to explore spin physics and spintronics applications absent in graphene due to its extremely small SOC. Here, we report non-local electrical measurements in MoS2. The experimental data were obtained for MoS2 after mechanical exfoliation on top of SiO2/Si wafers. In addition, we define a tunable Hall bar structure using E-beam lithography. The result shows a negative resistance as we detect in a different length of tunable Hall bars. Based on this results, a nonlocal electric response in the different regime of the device, is argued to be resulting from the quasiballistic transport mechanism or spin Hall effect(SHE). And thus, the sweeping of an in-plane magnetic filed B|| was applied to confirm whether there is spin diffusion mediating charge conduction in MoS2.