Improving optical performance of InGaN/GaN multiple quantum wells based light-emitting diodes
博士 === 國立成功大學 === 材料科學及工程學系 === 105 === This research is focused on light emission efficiency enhancement of InGaN/GaN multiple quantum wells(MQWs) based ultraviolet(UV), blue(B) and green(G) light-emitting diodes (LEDs), which were grown by metalorganic chemical vapor deposition. The major scope is...
Main Authors: | Sheng-ChiehTsai, 蔡勝傑 |
---|---|
Other Authors: | Chuan-Pu Liu |
Format: | Others |
Language: | en_US |
Published: |
2017
|
Online Access: | http://ndltd.ncl.edu.tw/handle/3fxvjq |
Similar Items
-
Enhanced Luminescence Efficiency of InGaN-based Light-Emitting Diodes and Fabrication of White Light-Emitting Diodes
by: Ping-ChiehTsai, et al.
Published: (2010) -
Electroluminescence properties of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes
by: Tzung-Shian Yang, et al.
Published: (2009) -
GaN Based Solar Cell and Light Emitting Diode with Hybrid AlGaN/InGaN and GaN/InGaN Multiple Quantum Wells
by: Bing-HungHsieh, et al.
Published: (2015) -
InGaN/GaN quantum-well light-emitting diodes with a reversed piezoelectric polarization field
by: Meng-Jie Lee, et al.
Published: (2013) -
Investigation of InGaN/GaN multiple-quantum-well blue light emitting diode with InGaN/GaN superlattice current spreading layer
by: An-Bang Wang, et al.
Published: (2005)