Molecular Dynamics Simulation of Resistance Switching Mechanisms in Metal-Oxide-Based ReRAM Materials

碩士 === 國立中興大學 === 物理學系所 === 105 === Resistive Random Access Memories (ReRAMs) are promising candidates for non-volatile memory in the future. The underlying mechanism involves resistive switching in high-k dielectric layers, the changes of the resistance due to various mechanisms are caused by the e...

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Bibliographic Details
Main Authors: Yu-Li Chen, 陳渝琍
Other Authors: Mon-Shu Ho
Format: Others
Language:en_US
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/19632693338310355803

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