Molecular Dynamics Simulation of Resistance Switching Mechanisms in Metal-Oxide-Based ReRAM Materials
碩士 === 國立中興大學 === 物理學系所 === 105 === Resistive Random Access Memories (ReRAMs) are promising candidates for non-volatile memory in the future. The underlying mechanism involves resistive switching in high-k dielectric layers, the changes of the resistance due to various mechanisms are caused by the e...
Main Authors: | Yu-Li Chen, 陳渝琍 |
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Other Authors: | Mon-Shu Ho |
Format: | Others |
Language: | en_US |
Published: |
2017
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Online Access: | http://ndltd.ncl.edu.tw/handle/19632693338310355803 |
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