Molecular Dynamics Simulation of Resistance Switching Mechanisms in Metal-Oxide-Based ReRAM Materials
碩士 === 國立中興大學 === 物理學系所 === 105 === Resistive Random Access Memories (ReRAMs) are promising candidates for non-volatile memory in the future. The underlying mechanism involves resistive switching in high-k dielectric layers, the changes of the resistance due to various mechanisms are caused by the e...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19632693338310355803 |