Microstructure and characteristics of In-Zn-Sn-O thin films prepared by magnetron sputtering

• Main Authors: Yu-Hong Wang, 王宇鴻
• Other Authors: 薛富盛
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/07520916969091096221

碩士 === 國立中興大學 === 材料科學與工程學系所 === 105 === Typical oxide kind of TCO materials consist of In2O3, SnO2, and ZnO, and their mixtures have been extensively used in optoelectronic applications such as transparent electrodes in touch panels, flat panel displays (FPDs), and solar cells. While the amorphous transparent conducting oxides exhibit the optical, electrical, thermal, and mechanical properties that are comparable or even superior to those crystalline transparent conductive films. Typical amorphous transparent conductive films have a-IZO and a-IGZO. However, the next generation displays require a larger screen size, a higher frame rate, and a higher resolution than the currently commercialized displays, which implies that the carrier mobility of the a-IGZO (typically 10 ~ 20 cm2/Vs ) is not enough for the next generation thin-film electronics. Recently, several groups successfully fabricated the high mobility (> 30 cm2/Vs) amorphous oxide using amorphous indium-zinc-tin-oxide (a-IZTO) as a channel material. After improvement, it is expected to replace the common indium tin oxide (ITO) and indium gallium zinc oxide (IGZO) films on the market. This study is divided into two parts: one is co-sputtering using ITO and ZnO targets; the other one is DC sputtering using single ITO or IZTO target. In the first experimental, ZnO-doped ITO coatings were prepared on Si and Corning 1737 glass substrates through a co-sputtering system to methodically investigate the effects of Zn contents by varying ZnO discharge powers (0-250 W). During the experiment, the composition, microstructure and optoelectronic properties of the deposited films were investigated by changing substrate temperature, film thickness and post annealing temperature. The results show that as the ZnO-target power increases to 60 W, the Zn content is 8.44 at.%, which has the high amorphous stability, the low surface roughness of 0.153 nm, the high average visible light transmittance of 82.4 %, and the low electrical resistivity of 6.84 × 10-4 Ω-cm. The second experimental aimed to investigate the IZTO thin films deposited by using IZTO targets with 0 wt.%, 5 wt.%, 10 wt.%, and 20 wt.% ZnO. The results show that when IZTO thin film deposited by using the IZTO target with 20 wt.% ZnO, the Zn content is 11.92 at.%. It has the best amorphous stability and it''s the surface roughness is 0.432 nm, the average visible light transmittance is 82.7 %, and the electrical resistivity is 3.37 × 10-4 Ω-cm.