Nickel oxide for heterojunction solar cells

• Main Authors: Wei-Hua Huang, 黃偉華
• Other Authors: 裴靜偉
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/07343735820191732832

碩士 === 國立中興大學 === 光電工程研究所 === 105 === In this thesis, carrier-selective contacts based on thin oxides of p type nickel oxide films ( front ) and hole-blocking titanium oxide ( back ) films were deposited on heterojunction silicon solar cells by liquid phase deposition with deposition solution of nickel fluorine and boric acid, ammonium hexafluoro-titanate and boric acid, respectively. We used ultra-violet photoemission spectroscopy ( UPS ) to analyze the work function and draw the band diagram. And we used x-ray photoelectron spectroscopy ( XPS ) to analyze the composition of NiO / Si interface. And use FTIR analysis to analyze the NiO thin films’ bonding. We also use Transmission Length Method ( TLM ) to analyze the contact resistance and specific contact resistance. In heterojunction silicon solar cells, nickel oxide optimal thickness is 3 nm. Therefore, the power conversion efficiency of heterojunction solar cell reached 7.79 %, open circuit voltage of 0.52 V, short circuit density of 26.2 mA/cm2, fill factor of 57.2 %.