| Summary: | 碩士 === 明志科技大學 === 材料工程系碩士班 === 105 === Organic thin film transistors (OTFTs) based on pentacene and hydroxyl-containing polyimide(PI)-SiO2-TiO2 hybrid films were fabricated on silicon substrate as the semiconductor and the gate dielectrics, respectively.The precursor was used to synthesize nano-sized SiO2-TiO2 colloid through the hydrolysis and condensation reaction in a sol-gel process. Then, PI-SiO2-TiO2 hybrid solution was synthesized from a condensation reaction between hydroxyl-containing SiO2-TiO2 and polyimide, followed by a spin coating to form the PI- SiO2-TiO2 dielectric composites. Cyclic olefin copolymer (COC) as a modify layer to modified the interface between the semiconductor and the dielectric layer. In addition, PffBT4T-2OD replace Pentacene as semiconductor, expect a good performance on device. The thermal, optical, surface, dielectric, and electrical properties of the PI-SiO2-TiO2 dielectric composites were investigated and correlated to the content of SiO2-TiO2, due to the dispersion and aggregation behaviors of the nanoparticles. The PI-SiO2-TiO2 hybrid dielectrics showed the tunable insulating properties, including high dielectric constants, high capacitances, and low leakage current densities. In addition, the bottom-gate top-contact OTFTs based on the PI-SrO2-TiO2 hybrid dielectrics showed the best performance with the near zero threshold voltage, PST40% and PST40%-COC showed the field-effect mobility (μ) about 7.39 cm2V-1s-1 and 9.72 cm2V-1s-1 and the current on/off ratio (Ion/ Ioff) about 2.5x104 and 1.4x104, respectively. Based on the above results, we are succeeded in the synthetic organic/inorganic hybrid thin film and the PST40% is the best performance among the films.
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