Junction Depth and Anode Width Correlated with Switch Function of IGBT and Fitting Analysis Correlated with Different Channel Length
碩士 === 明新科技大學 === 電子工程系碩士班 === 105 === Insulated Gate Bipolar Transistor (IGBT) is a power discrete with both benefits; one of them is high input impedance of MOSFET and the other is high current gain of BJT (Bipolar Junction Transistor). Successfully associated with the merits of high input impedan...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/dk4uzc |