| Summary: | 碩士 === 明新科技大學 === 光電系統工程系碩士班 === 105 === Owing to the long lifetime and high efficiency, the light-emitting diodes (LEDs) are widely used as the most important lighting source in the world. In the applications of LEDs, the reliability and stability of the use of LEDs in the commercial and outdoor lighting are especially important. To verify the reliability and stability of the LEDs in use, the accelerated degradation test (ADT) will be used to verify the characteristics of the LEDs for a long time. Then the destructive testing methods, such as scanning electron microscope (SEM) or focal ion beam (FIB) are usually used to identify the defects in devices. However, the devices will be damaged and not be used in the following ADT. In this study, a nondestructive testing method of confocal microscopy will be used to identify the characteristics of GaN LEDs in ADT. The electroluminescence (EL), photoluminescence (PL) and optical bean induced current (OBIC) with confocal microscopy are used to identify the characteristics of GaN devices at each period in ADT. The current-voltage curve (I-V Curve), reverse current (IR), radiometric flux-current curve (L-I Curve) will also used to verify the measurement results of confocal microscopy of GaN devices.
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