Fabrication and Characterization of TiO2 UV Photoconductive devices

• Main Authors: JIN-YING, 金穎
• Other Authors: LEE, HSIAO-YI
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/2m523a

碩士 === 國立高雄應用科技大學 === 電機工程系博碩士班 === 105 === In this study, the TiO2 thin film were deposited on corning glass substrate at room temperature using RF magnetron sputtering technique. The TiO2 thin film was characterized by field-emission scanning microscope (FE-SEM), X-ray diffraction (XRD), and ultraviolet-visible spectroscopy (UV-Vis). Further, we were used to fabricate metal-semiconductor-metal (MSM) ultraviolet (UV) photoconductive devices with different contact electrodes (Ag/Ti or Au/Ti). After the electrical characteristics measurement, we used Au/Ti on TiO2 MSM photoconductive devices as contact electrodes. With 5 V applied bias, it was found that the responsivities of the fabricated TiO2 MSM photoconductive devices with 300,400 and 500 annealing treatment were 0.05,0.284 and 5.9 A/W, respectively, with corresponded to UV to visible rejection ratios were 41,135 and 73.