| Summary: | 碩士 === 逢甲大學 === 電子工程學系 === 105 === Random access memory (ReRAM) has attracted attention for next generation non-volatile memory in future, because of its advantages including high operation speed, low power consumption, simple structure and better scalability. Resistive memory as the material of the intermediate resistance layer changes, the memory characteristics and conversion mechanisms will be different. Recently, organic materials proposed to replace inorganic materials, because of its conformational variability, better chemical and mechanical characteristics, and innate flexibility. The organic materials can be fabricated on flexible substrate and it can be used to flexible electronic devices. Moreover, ReRAM with organic resistive layer will be more and more popular and interesting, because of low cost, chain connectivity and conformational variability of organic materials.
In this thesis, polyamic acid (PAA) is used as the pioneer of polyimide (PI). After 260oC imidization process, the PAA has been transformed to PI thin film. The PI thin film has been applied as resistive layer after rubbing technology of liquid crystal, which has been applied as resistive layer for Al/PI/TaN organic-based ReRAM. For the basic electrical characteristics, PI-based ReRAM has outstanding characteristics. When the angle of rubbing spindle is larger, the set operation electric field is smaller and the current of low resistance state is not reduced. Meanwhile, a higher angle of rubbing spindle leads to a larger memory window (on/off ratio>109) PI-based ReRAM. Furthermore, the leakage current is obviously decreased without on current degradation. The reliability of PI-based ReRAM is improving by rubbing technology.
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