Effects of Benzene Ring Numbers on the Polyimide-Based Resistive Random Access Memories
碩士 === 逢甲大學 === 電子工程學系 === 105 === The generation non-volatile memory has attracted attention, the resistive random access memory (ReRAM) is focused on the spotlight. That is because its advantages including simple structure, high operation speed, low power consumption and better scalability. There...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52601380233518306491 |