Effects of Benzene Ring Numbers on the Polyimide-Based Resistive Random Access Memories

• Main Authors: LIN, GUAN-WEI, 林冠緯
• Other Authors: Yang, Ping-Chang
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/52601380233518306491

碩士 === 逢甲大學 === 電子工程學系 === 105 === The generation non-volatile memory has attracted attention, the resistive random access memory (ReRAM) is focused on the spotlight. That is because its advantages including simple structure, high operation speed, low power consumption and better scalability. There are many materials that have been used as the resistive layer for ReRAM. Recently, the organic materials have been attracted to replace the inorganic materials for resistive layer. The organic materials have the beneficial properties of the variability molecular structure, thermal stability, chemical resistance, mechanical strength and flexible. It can be used to portable and flexible electronic devices because of it can be fabricated on flexible substrate. Besides, the organic based ReRAM have been popular and interesting due to the low cost , simple structure and molecular variability for organic material. In the study, polyimide has been applied as resistive layer for organic-based ReRAM, as well as the proportioning technique has been utilized to turned molecular weights. We synthesized different molecular weights of polyamic acid (PAA) to form various PI films, and served as the resistive layer of ReRAM to exam their electrical performance. In conclusion, the polyimde-based ReRAM has the stable electric field, low leakage current and large memory window Ron/Roff ratio with increasing molecular weights .