Characteristic Analysis of HfO2 Thin Films Deposited by PE-ALD and its Application in Solar Cells
博士 === 大葉大學 === 電機工程學系 === 105 === HfO2 thin films were grown by plasma enhanced atomic layer deposited (PE-ALD) and their deposition condition is optimized. Changing different pretreatment silicon substrates and annealing temperatures improved the passivation properties of HfO2 thin films on silico...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/x9kgj2 |