Study of Flexible and Stretchable Non-volatile Resistive Memory Devices
碩士 === 正修科技大學 === 電子工程研究所 === 105 === The study of the flexible and stretchable non-volatile resistive memory device is presented. We can use the solution process with the materials of graphene and polymer (PEDOT：PSS) for the fabrication of the non-volatile resistive memory. The non-volatile mem...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5khy79 |
| Summary: | 碩士 === 正修科技大學 === 電子工程研究所 === 105 === The study of the flexible and stretchable non-volatile resistive memory device is presented. We can use the solution process with the materials of graphene and polymer (PEDOT：PSS) for the fabrication of the non-volatile resistive memory. The non-volatile memory works by changing the resistance of the materials.
Firstly, the mixed ratio of A：B=20：1 of PDMS at a temperature of 100 oC can perform the flexible substrate and meet the Young’s modulus of human body ranging from 140 to 600 KPa. The flexible substrate of PDMS can bear the maximum stretchable strain of 35% and appear to be the wearable applications of electric devices on the flexible substrate.
Secondly, the resistive memory devices with two directions are fabricated on the flexible substrate. A typical write-once-read-many-times (WORM) characteristic is demonstrated in the flexible and stretchable memory device. The measured results show that an ON/OFF ratio of approximately 102 is maintained for a retention time of 105 s. The retention time of several months is predictable because the significant degradation in the ON/OFF ratio has not been found yet. Finally, the maximum stretchable strain of about 20% is found in the stretchable non-volatile resistive memory. The flexible and stretchable non-volatile resistive memory on the flexible substrate can be performed.
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