| Summary: | 碩士 === 中華大學 === 電機工程學系 === 105 === In recent years, Thin-film transistors (TFTs) based on oxide semiconductors have more development potential in display market because of having higher performance and stability for mass production compared with the conventional a-Si TFTs. However, it have been designed most n-type oxide TFTs and used in various displays application or flexible electronics. Only a few p-type oxide TFTs have been reported for paper. The complementary logic circuits exploiting both n-type and p-type transistors, and it have several advantages over circuits with only one type transistors, such as the low power consumption and the simplicity in the circuit design. High performance p-type oxide thin film transistors are highly desirable. This low-power, high-performance complementary circuit can be used with oxide thin film transistors or active array organic light emitting diode (AMOLED) displays.
In this research, We used an electron beam evaporation system to deposit our tin oxide film as an active layer and to deposit nickel metal and aluminum as our S/D. Optimal annealing temperature is investigated by annealing the tin oxide thin film at different annealing temperatures and different metals as electrodes to discuss its electrical properties.
According to the experimental results, nickel metal and aluminum metal as the source and drain of the tin oxide thin film transistor, adjust the furnace tube annealing results have a good performance characteristics of the device. This has excellent development potential on plastic substrates. It was found that annealing treatment at 300°C for 30 minutes with S/D nickel metal, shows good threshold voltage -2.55 V, lower subthreshold swing value of 0.742 V/dec and the best Ion/Ioff ratio 3.03×103.
Keywords: Tin oxide, P-type, Thin-film transistor, Nickel, Aluminum, Furnace annealing
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