| Summary: | 博士 === 長庚大學 === 電子工程學系 === 105 === (1) The first part of this thesis involves immersing AlGaInP LED in (NH4)2Sx solution to carry out the surface sulfur treatment, hoping that such sulfur treatment could passivate LED surface, remove dangling bond and eliminate surface damages resulted during the wafer manufacturing process, which further suppresses current leakage. (2) Micro-channel structures of circular hole array were created for increasing the light escaping path, improving the external quantum efficiency of light-emitting diode were improved significantly. (3) Sputtering and thermal treatment methods were proposed for the manufacturing of thin-film zinc oxide varistor. This thin-film varistor showed nonlinear coefficient of larger than 50 and a transmission current density of 50A/cm2. In addition, we have successfully use such thin-film zinc oxide varistor as LED package submount, Which has significant improvement in terms of anti-static property for the LED. We also deposit ZnO thin film on LED surface as a parallel varistor. The LED chip shows excellent anti-static property. (4) A stacking vertically the red, green, and blue LEDs were generated. High transparent glass substrate was selected and with the help of flip-chip technology, green and blue LEDs were incorporated onto the substrate. Subsequently, The required color temperature can then be adjusted by varying the current of red, green and blue LED separately. In this study, device properties such as luminous flux, color rendering and stability were also analyzed and investigated.
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