IGZO process development and improvement

• Main Authors: Chien Ming Lin, 林健明
• Other Authors: C. H. Kao
• Format: Others
• Language: zh-TW
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/ba37n5

碩士 === 長庚大學 === 電子工程學系 === 105 === In the development of TFT-LCD，from the early TN-type panel，the development to the VA- type、IPS- type、FFS- type，from the viewing angle of the improvement and pixel enhancement as the spindle，has been developed to pay more attention to low energy consumption and Flexible panel technology。IGZO is a metal oxide semiconductor process。In the design of IGZO，the elements of In、Ga and Zn are used simultaneously。During the verification process，we find that the combined effect of IGZ and oxygen, light，carrier concentration and Mobility To the characteristics of the IGZ， in full experimental verification and follow-up process parameters to adjust to achieve energy-saving and high-quality target development。 In has a high concentration of carrier characteristics、good Mobility，but In-O bond is more unstable，prone to oxygen vacancies，and In the characteristics of the carrier concentration is too high，so will lead to excessive oxygen lead Poor performance and difficult to control。IGZO design，Ga-O bond strength，and difficult to form oxygen vacancies，it can quickly reduce the carrier concentration， reduce the amount of oxygen into the IGZO to control the Resietivity， to determine its characteristics，although the complex Ga Will make the Mobility decline，can provide better Vth (zero value to move) and smaller Subthershold Swing，which in the process design will be more stable。 Component light will cause light leakage current，if the light the greater the energy， the more likely to stimulate the electron to produce more electronic hole， so the leakage phenomenon is more serious。Improve the way to: ① the use of pure white、 ② ARRAY BM matrix design to cover，to improve。 LCD panel manufacturing process，Mura is a common bad，the cause of many yuan，to explore the root cause of its occurrence is divided into ARRAY and CELL， ARRAY is usually caused by poor surface uniformity of the etch，such as belonging to the CELL Process，usually with the TFT，CF substrate between the GAP has a clear relationship，so the measures Mura must first confirm the resulting process，and then countermeasures。And some Mura can be achieved by high temperature 120 ° C liquid crystal charge removal and re-allocation，thereby improving。