Measurement of electrical properties of light-emitting diodes under forward bias
碩士 === 長庚大學 === 光電工程研究所 === 105 === This work presents a theory based on the change in LED (Light emitting diodes) carrier concentration under forward bias that explains the relation between current, capacitance and conductance. The theory provides a basic way to distinguish between structure capac...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6xegd2 |
| Summary: | 碩士 === 長庚大學 === 光電工程研究所 === 105 === This work presents a theory based on the change in LED (Light emitting diodes) carrier concentration under forward bias that explains the relation between current, capacitance and conductance. The theory provides a basic way to distinguish between structure capacitance and parasitic capacitance and further reveals the mechanism of the sample comprehensively.
The sample shows two different current types during the I-V measurement under variable temperatures. One of the current types is speculated lightless through the measurement of luminescence. The lightless current is observed more frequently in higher temperatures, which explains why the brightness of the LED carrier decreases in higher temperatures.
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