| Summary: | 碩士 === 國立中正大學 === 光機電整合工程研究所 === 105 === Two-dimensional materials have special properties that make them interesting for electronic devices. Because of the many different possible types of two-dimensional materials we believe that combinations of two-dimensional materials could be used to make new and important devices. Therefore, we need a way to produce suitable two-dimensional materials. Unfortunately, such growth requires proper surface energy conditions, which makes certain two-dimensional materials hard to grow.
We demonstrate a universal route for growth two-dimensional material. We research the precipitation of silicon between graphene and the substrate, an arrangement that will produce large pressure and change the surface energy. We show that this method allows to change the growth type from three-dimensional to two-dimensional geometry and form two-dimensional siliconfilms.
We observe that under non-optimized conditions, silicon atoms do not have enough kinetic energy to crystallize and the silicon films are amorphous. But if we provide a seed we can change the nucleation mechanism and form crystalline fractal films. Those crystalline fractal films exhibit a new photoluminescence peak at 610nm and show novel bonding behavior that suggests the presence of silicene – a sp2-bonded silicon allotrope with exciting applications in optoelectronic devices. Finally, we find that modification of the graphene cover affects the silicene sp2 bond type which highlights the interaction of graphene and silicene.
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