Zero Field Switching and Symmetry Breaking Driven by Spin Hall Effect
碩士 === 國立中正大學 === 物理系研究所 === 105 === A series of magnetic multilayered structures are fabricated by sputtering and the current induced magnetization switching by spin Hall effect is studied in this thesis. The samples include: Si(substrate)/Ta(10)/MgO(1)/CoFeB(x)/W(1)/CoFeB(1.1)/MgO(1)/Ta(3), x= 1.2...
Main Authors: | JHUANG, WUN-HAO, 莊文豪 |
---|---|
Other Authors: | CHERN, GUNG |
Format: | Others |
Language: | zh-TW |
Published: |
2017
|
Online Access: | http://ndltd.ncl.edu.tw/handle/eshys6 |
Similar Items
-
Tunable symmetry breaking and helical edge transport in a graphene quantum spin Hall state
by: Young, Andrea Franchini, et al.
Published: (2014) -
Effect of breaking bulk-inversion symmetry on the quantum spin Hall physics of CdTe/HgTe/CdTe structures
by: Lin, Yi-Shiuan, et al.
Published: (2013) -
Enhanced breaking of heavy quark spin symmetry
by: Feng-Kun Guo, et al.
Published: (2014-11-01) -
Zero Field Switching of Perpendicular Synthetic Antiferromagnet by Spin Current
by: HOU,YU-YANG, et al.
Published: (2017) -
Symmetry Breaking Induced Pockels Effect in a Tilted Field Switching BPIII Cell
by: Hui-Yu Chen, et al.
Published: (2019-11-01)