| Summary: | 碩士 === 元智大學 === 光電工程學系 === 104 === In this study, two types of transparent thin-film transistor (TFT) with distinct channel designs were fabricated: 1) the typical single channel layer of amorphous indium gallium zinc oxide (a-IGZO), and 2) the composite-channel layer of Ti-doped GaZnO (GTZO) /a-IGZO/GTZO. The bottom GTZO thin films in the composite channels exhibited a high smooth surface (Rrms ~ 0.23 nm), which could play a role of buffer template for superior IGZO channel layer growth, while the top GTZO thin film with high carrier concentration of 1.5 × 1021 cm-3 serves as both a carrier supplement and passivation layer for reducing the absorption of oxygen and moisture in the back-channel of the TFT. The GTZO/IGZO/GTZO composite-channel TFT in this study demonstrated a high level of device performance, exhibiting an improved field effect mobility of 14.1 cm2/V-s, subthreshold swing of 0.33 V/decade, off current of 2.92×10-12 A, threshold voltage of 1.7 V, on/off current ratio of 3.95×107 and enhanced negative bias stresses stability.
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